document number: 84685 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.6, 26-feb-09 449 silicon pin photodiode, rohs compliant, released for lead (pb)-free reflow soldering, aec-q101 released temd5020x01 vishay semiconductors description temd5020x01 is a high speed and high sensitive pin photodiode. it is a miniature surface mount device (smd) including the chip with a 4.4 mm 2 sensitive area detecting visible and near infrared radiation. features ? package type: surface mount ? package form: top view ? dimensions (l x w x h in mm): 5 x 4.24 x 1.12 ? radiant sensitive area (in mm 2 ): 4.4 ? aec-q101 qualified ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 65 ? floor life: 72 h, msl 4, acc. j-std-020 ? lead (pb)-free reflow soldering ? lead (pb)-free component ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? high speed photo detectors note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 20535 product summary component i ra (a) ? (deg) 0.1 (nm) temd5020x01 35 65 430 to 1100 ordering information ordering code packaging remarks package form temd5020x01 tape and reel moq: 1500 pcs, 1500 pcs/reel top view absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 110 c soldering temperature acc. refl ow solder profile fig. 8 t sd 260 c thermal resistance junction/ambient soldered on pcb with pad dimensions: 4 mm x 4 mm r thja 350 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 84685 450 rev. 1.6, 26-feb-09 temd5020x01 vishay semiconductors silicon pin photodiode, rohs compliant, released for lead (pb)-free reflow soldering, aec-q101 released note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 48 pf v r = 3 v, f = 1 mhz, e = 0 c d 17 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 32 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 25 35 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 900 nm range of spectral bandwidth 0.1 430 to 1100 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 40 60 8 0 1 10 100 1000 100 94 8 403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - re lati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel
document number: 84685 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.6, 26-feb-09 451 temd5020x01 silicon pin photodiode, rohs compliant, released for lead (pb)-free reflow soldering, aec-q101 released vishay semiconductors fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sens itivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 10 94 8 421 v r =5 v = 950 nm e e - irradiance (m w /cm ) 2 i ra - re v erse light c u rrent ( a) 0.1 1 10 1 10 100 v r - re v erse v oltage ( v ) 100 94 8 422 i ra - re v erse light c u rrent ( a) 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 = 950 nm 0.1 1 10 0 20 40 60 8 0 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 100 94 8 423 e = 0 f = 1 mhz 350 550 750 950 0 0.2 0.4 0.6 0. 8 1.0 1150 94 8 420 - w a v elength (nm) s ( ) rel - relati v e spectral sensiti v it y 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8 406 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 84685 452 rev. 1.6, 26-feb-09 temd5020x01 vishay semiconductors silicon pin photodiode, rohs compliant, released for lead (pb)-free reflow soldering, aec-q101 released package dimensions in millimeters dra w ing- n o.: 6.541-5059.01-4 iss u e: 4; 26.04.07 192 8 0 n ot indicated tolerances 0.1
document number: 84685 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.6, 26-feb-09 453 temd5020x01 silicon pin photodiode, rohs compliant, released for lead (pb)-free reflow soldering, aec-q101 released vishay semiconductors taping dimensions in millimeters reel dimensions in millimeters 20537 20 8 74
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 84685 454 rev. 1.6, 26-feb-09 temd5020x01 vishay semiconductors silicon pin photodiode, rohs compliant, released for lead (pb)-free reflow soldering, aec-q101 released solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020d drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. ea ch bag contains a desiccant. floor life time between soldering and removing from mbb must not exceed the time indicated in j-std-020: moisture sensitivity: level 4 floor life: 72 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or recommended conditions: 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 8 41 255 c
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